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Product details

MS2212

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - RF
Package
M222

Description

RF Transistor NPN 55V 1.8A 960MHz ~ 1.215GHz 50W Chassis Mount M222

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
1.8A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 500mA, 5V
Frequency - Transition
960MHz ~ 1.215GHz
Gain
8.1dB ~ 8.9dB
Mfr
Microsemi Corporation
Mounting Type
Chassis Mount
Noise Figure (dB Typ @ f)
-
Operating Temperature
250°C (TJ)
Package
Bulk
Package / Case
M222
Power - Max
50W
Series
-
Supplier Device Package
M222
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
55V