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Product details

MS2211

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - RF
Package
M222

Description

RF Transistor NPN 48V 900mA 960MHz ~ 1.215GHz 25W Chassis Mount M222

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
900mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 250mA, 5V
Frequency - Transition
960MHz ~ 1.215GHz
Gain
9.3dB
Mfr
Microsemi Corporation
Mounting Type
Chassis Mount
Noise Figure (dB Typ @ f)
-
Operating Temperature
250°C (TJ)
Package
Bulk
Package / Case
M222
Power - Max
25W
Series
-
Supplier Device Package
M222
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
48V