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2N5109 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2N5109

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - RF
Package
Bulk

Description

RF Transistor NPN 20V 400mA 1.2GHz 2.5W Through Hole TO-39

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
400mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA, 15V
Frequency - Transition
1.2GHz
Gain
12dB
Mfr
Microsemi Corporation
Mounting Type
Through Hole
Noise Figure (dB Typ @ f)
-
Operating Temperature
-
Package
Bulk
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
2.5W
Series
-
Supplier Device Package
TO-39
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
20V