2N3866A product image

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Product details

2N3866A

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - RF
Package: Bulk

Description

RF Transistor NPN 30V 400mA 400MHz 1W Through Hole TO-39

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 400mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 400MHz
Gain: -
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Noise Figure (dB Typ @ f): -
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Power - Max: 1W
Series: -
Supplier Device Package: TO-39
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V