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Product details

MS1004

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - RF
Package: Bulk

Description

RF Transistor NPN 55V 40A 30MHz 330W Chassis Mount M177

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 40A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
Frequency - Transition: 30MHz
Gain: 14.5dB
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
Noise Figure (dB Typ @ f): -
Operating Temperature: 200°C (TJ)
Package: Bulk
Package / Case: M177
Power - Max: 330W
Series: -
Supplier Device Package: M177
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V