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Product details

MS1003

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - RF
Package
M111

Description

RF Transistor NPN 18V 20A 136MHz ~ 175MHz 270W Surface Mount M111

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
20A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 5A, 5V
Frequency - Transition
136MHz ~ 175MHz
Gain
6dB
Mfr
Microsemi Corporation
Mounting Type
Surface Mount
Noise Figure (dB Typ @ f)
-
Operating Temperature
200°C (TJ)
Package
Bulk
Package / Case
M111
Power - Max
270W
Series
-
Supplier Device Package
M111
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
18V