Vishay General Semiconductor - Diodes Division
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Product details
SMA5125
Availability on request
Description
Mosfet Array 3 N and 3 P-Channel (3-Phase Bridge) 60V 10A 4W Through Hole 12-SIP
Datasheet
Not provided
Specifications
- Current - Continuous Drain (Id) @ 25°C
- 10A
- Drain to Source Voltage (Vdss)
- 60V
- FET Feature
- Standard
- FET Type
- 3 N and 3 P-Channel (3-Phase Bridge)
- Gate Charge (Qg) (Max) @ Vgs
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 460pF @ 10V
- Mfr
- Sanken
- Mounting Type
- Through Hole
- Operating Temperature
- 150°C (TJ)
- Package
- Tube
- Package / Case
- 12-SIP
- Power - Max
- 4W
- Rds On (Max) @ Id, Vgs
- 140mOhm @ 5A, 4V
- Series
- -
- Supplier Device Package
- 12-SIP
- Vgs(th) (Max) @ Id
- 2V @ 250µA