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2SA1309ARA product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SA1309ARA

Availability on request

Manufacturer
Panasonic Electronic Components
Category
Transistors - Bipolar (BJT) - Single
Package
NS-B1

Description

Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 300 mW Through Hole NS-B1

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SA1309
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
210 @ 2mA, 10V
Frequency - Transition
80MHz
Mfr
Panasonic Electronic Components
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Cut Tape (CT), Tape & Box (TB)
Package / Case
3-SIP
Power - Max
300 mW
Series
-
Supplier Device Package
NS-B1
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
50 V

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