onsemi
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Product details
2SA1567
Availability on request
Description
Bipolar (BJT) Transistor PNP 50 V 12 A 40MHz 35 W Through Hole TO-220F
Datasheet
Not provided
Specifications
- Current - Collector (Ic) (Max)
- 12 A
- Current - Collector Cutoff (Max)
- 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 6A, 1V
- Frequency - Transition
- 40MHz
- Mfr
- Sanken
- Mounting Type
- Through Hole
- Operating Temperature
- 150°C (TJ)
- Package
- Bulk
- Package / Case
- TO-220-3 Full Pack
- Power - Max
- 35 W
- Series
- -
- Supplier Device Package
- TO-220F
- Transistor Type
- PNP
- Vce Saturation (Max) @ Ib, Ic
- 350mV @ 300mA, 6A
- Voltage - Collector Emitter Breakdown (Max)
- 50 V