MURT20010R product image

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Product details

MURT20010R

Availability on request

Manufacturer: GeneSiC Semiconductor
Category: Diodes - Rectifiers - Arrays
Package: Three Tower

Description

Diode Array 1 Pair Common Anode Standard 100 V 100A Chassis Mount Three Tower

Datasheet Not provided

Specifications

Base Product Number: MURT20010
Current - Average Rectified (Io) (per Diode): 100A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Mfr: GeneSiC Semiconductor
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Package: Bulk
Package / Case: Three Tower
Reverse Recovery Time (trr): 75 ns
Series: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: Three Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A