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Product details

GA35XCP12-247

Availability on request

Manufacturer: GeneSiC Semiconductor
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT PT 1200 V Through Hole TO-247AB

Datasheet Not provided

Specifications

Current - Collector Pulsed (Icm): 35 A
Gate Charge: 50 nC
IGBT Type: PT
Input Type: Standard
Mfr: GeneSiC Semiconductor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Reverse Recovery Time (trr): 36 ns
Series: -
Supplier Device Package: TO-247AB
Switching Energy: 2.66mJ (on), 4.35mJ (off)
Td (on/off) @ 25°C: -
Test Condition: 800V, 35A, 22Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max): 1200 V