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2SD1012F-SPA product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SD1012F-SPA

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
3-SPA

Description

Bipolar (BJT) Transistor NPN 15 V 700 mA 250MHz 250 mW Through Hole 3-SPA

Datasheet Not provided
Specifications
Base Product Number
2SD1012
Current - Collector (Ic) (Max)
700 mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 50mA, 2V
Frequency - Transition
250MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
125°C (TJ)
Package
Bulk
Package / Case
3-SIP
Power - Max
250 mW
Series
-
Supplier Device Package
3-SPA
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
80mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
15 V