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2SC4134S-E product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SC4134S-E

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TP

Description

Bipolar (BJT) Transistor NPN 100 V 1 A 120MHz 800 mW Through Hole TP

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SC4134
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 5V
Frequency - Transition
120MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Power - Max
800 mW
Series
-
Supplier Device Package
TP
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 400mA
Voltage - Collector Emitter Breakdown (Max)
100 V

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