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2SC3332S product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SC3332S

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
3-NP

Description

Bipolar (BJT) Transistor NPN 160 V 700 mA 120MHz 700 mW Through Hole 3-NP

Specifications
Base Product Number
2SC3332
Current - Collector (Ic) (Max)
700 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 5V
Frequency - Transition
120MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Power - Max
700 mW
Series
-
Supplier Device Package
3-NP
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
400mV @ 25mA, 250mA
Voltage - Collector Emitter Breakdown (Max)
160 V