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2SA2205-E product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SA2205-E

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TP

Description

Bipolar (BJT) Transistor PNP 100 V 2 A 300MHz 800 mW Through Hole TP

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SA2205
Current - Collector (Ic) (Max)
2 A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 5V
Frequency - Transition
300MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Power - Max
800 mW
Series
-
Supplier Device Package
TP
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
240mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
100 V

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