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2SA1552S-E product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SA1552S-E

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TP

Description

Bipolar (BJT) Transistor PNP 160 V 1.5 A 120MHz 1 W Through Hole TP

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SA1552
Current - Collector (Ic) (Max)
1.5 A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 5V
Frequency - Transition
120MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Power - Max
1 W
Series
-
Supplier Device Package
TP
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
160 V

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