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Product details

2N5415

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-39

Description

Bipolar (BJT) Transistor PNP 200 V 100 mA 1 W Through Hole TO-39

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2N541
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
50µA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA, 10V
Frequency - Transition
-
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-
Package / Case
TO-39
Power - Max
1 W
Series
-
Supplier Device Package
TO-39
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
2.5V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
200 V

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