APT50GT120B2RDLG product image

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Product details

APT50GT120B2RDLG

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT NPT 1200 V 106 A 694 W Through Hole

Datasheet Not provided

Specifications

Base Product Number: APT50GT120
Current - Collector (Ic) (Max): 106 A
Current - Collector Pulsed (Icm): 150 A
Gate Charge: 240 nC
IGBT Type: NPT
Input Type: Standard
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3 Variant
Power - Max: 694 W
Series: Thunderbolt IGBT®
Switching Energy: 3585µJ (on), 1910µJ (off)
Td (on/off) @ 25°C: 23ns/215ns
Test Condition: 800V, 50A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max): 1200 V