SI3529DV-T1-GE3 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

SI3529DV-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR)

Description

Mosfet Array N and P-Channel 40V 2.5A, 1.95A 1.4W Surface Mount 6-TSOP

Datasheet View datasheet

Specifications

Base Product Number: SI3529
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Power - Max: 1.4W
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Series: TrenchFET®
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA