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Product details

SI5511DC-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Mosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™

Datasheet Not provided

Specifications

Base Product Number: SI5511
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-SMD, Flat Lead
Power - Max: 3.1W, 2.6W
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
Series: TrenchFET®
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 2V @ 250µA