Vishay General Semiconductor - Diodes Division
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Product details
SI3585DV-T1-GE3
Availability on request
Description
Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP
Datasheet
Not provided
Specifications
- Base Product Number
- SI3585
- Current - Continuous Drain (Id) @ 25°C
- 2A, 1.5A
- Drain to Source Voltage (Vdss)
- 20V
- FET Feature
- Logic Level Gate
- FET Type
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds
- -
- Mfr
- Vishay Siliconix
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Power - Max
- 830mW
- Rds On (Max) @ Id, Vgs
- 125mOhm @ 2.4A, 4.5V
- Series
- TrenchFET®
- Supplier Device Package
- 6-TSOP
- Vgs(th) (Max) @ Id
- 600mV @ 250µA (Min)