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PHD13005,127 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

PHD13005,127

Availability on request

Manufacturer
WeEn Semiconductors
Category
Transistors - Bipolar (BJT) - Single
Package
TO-220AB

Description

Bipolar (BJT) Transistor NPN 400 V 4 A 75 W Through Hole TO-220AB

Specifications
Base Product Number
PHD13
Current - Collector (Ic) (Max)
4 A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 2A, 5V
Frequency - Transition
-
Mfr
WeEn Semiconductors
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Tube
Package / Case
TO-220-3
Power - Max
75 W
Series
-
Supplier Device Package
TO-220AB
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)
400 V