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PHE13003A,412 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

PHE13003A,412

Availability on request

Manufacturer
WeEn Semiconductors
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92-3

Description

Bipolar (BJT) Transistor NPN 400 V 1 A 2.1 W Through Hole TO-92-3

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
PHE13
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 400mA, 5V
Frequency - Transition
-
Mfr
WeEn Semiconductors
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Power - Max
2.1 W
Series
-
Supplier Device Package
TO-92-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 750mA
Voltage - Collector Emitter Breakdown (Max)
400 V

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