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Product details

APTM60A23FT1G

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - FETs, MOSFETs - Arrays
Package: Bulk

Description

Mosfet Array 2 N-Channel (Half Bridge) 600V 20A 208W Chassis Mount SP1

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 600V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Bulk
Package / Case: SP1
Power - Max: 208W
Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V
Series: -
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 1mA