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Product details

APTGT75DH120TG

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - IGBTs - Modules
Package: Bulk

Description

IGBT Module Trench Field Stop Asymmetrical Bridge 1200 V 110 A 357 W Chassis Mount SP4

Datasheet Not provided

Specifications

Configuration: Asymmetrical Bridge
Current - Collector (Ic) (Max): 110 A
Current - Collector Cutoff (Max): 250 µA
IGBT Type: Trench Field Stop
Input: Standard
Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Bulk
Package / Case: SP4
Power - Max: 357 W
Series: -
Supplier Device Package: SP4
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max): 1200 V