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Product details

APTGT75A120D1G

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - IGBTs - Modules
Package: Bulk

Description

IGBT Module Trench Field Stop Half Bridge 1200 V 110 A 357 W Chassis Mount D1

Datasheet Not provided

Specifications

Configuration: Half Bridge
Current - Collector (Ic) (Max): 110 A
Current - Collector Cutoff (Max): 4 mA
IGBT Type: Trench Field Stop
Input: Standard
Input Capacitance (Cies) @ Vce: 5.345 nF @ 25 V
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: -
Package: Bulk
Package / Case: D1
Power - Max: 357 W
Series: -
Supplier Device Package: D1
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max): 1200 V