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2SA1381DSTU product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SA1381DSTU

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-126-3

Description

Bipolar (BJT) Transistor PNP 300 V 100 mA 150MHz 7 W Through Hole TO-126-3

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SA1381
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 10V
Frequency - Transition
150MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-225AA, TO-126-3
Power - Max
7 W
Series
-
Supplier Device Package
TO-126-3
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
600mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300 V

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