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BU508AW product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BU508AW

Availability on request

Manufacturer
STMicroelectronics
Category
Transistors - Bipolar (BJT) - Single
Package
TO-247-3

Description

Bipolar (BJT) Transistor NPN 700 V 8 A 125 W Through Hole TO-247-3

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
BU508
Current - Collector (Ic) (Max)
8 A
Current - Collector Cutoff (Max)
200µA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 100mA, 5V
Frequency - Transition
-
Mfr
STMicroelectronics
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Tube
Package / Case
TO-247-3
Power - Max
125 W
Series
-
Supplier Device Package
TO-247-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 1.6A, 4.5A
Voltage - Collector Emitter Breakdown (Max)
700 V

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