GE17080CDA3 product image

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Product details

GE17080CDA3

Availability on request

Manufacturer: GE Aerospace
Category: Transistors - FETs, MOSFETs - Arrays
Package: Bulk

Description

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 765A 2350W Chassis Mount

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 765A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Silicon Carbide (SiC)
FET Type: 2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs: 2414nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 58000pF @ 900V
Mfr: GE Aerospace
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (Tc)
Package: Bulk
Package / Case: Module
Power - Max: 2350W
Rds On (Max) @ Id, Vgs: 2.23mOhm @ 765A, 20V
Series: SiC Power
Vgs(th) (Max) @ Id: 4.5V @ 160mA