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Product details

2SC5886A(T6L1,NQ)

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - Bipolar (BJT) - Single
Package
PW-MOLD

Description

Bipolar (BJT) Transistor NPN 50 V 5 A 1 W Surface Mount PW-MOLD

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
5 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 500mA, 2V
Frequency - Transition
-
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max
1 W
Series
-
Supplier Device Package
PW-MOLD
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
220mV @ 32mA, 1.6A
Voltage - Collector Emitter Breakdown (Max)
50 V

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