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Product details

2SA2059(TE12L,F)

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - Bipolar (BJT) - Single
Package
PW-MINI

Description

Bipolar (BJT) Transistor PNP 20 V 3 A 1 W Surface Mount PW-MINI

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
3 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 2V
Frequency - Transition
-
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-243AA
Power - Max
1 W
Series
-
Supplier Device Package
PW-MINI
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
190mV @ 53mA, 1.6A
Voltage - Collector Emitter Breakdown (Max)
20 V

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