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Product details

G5S6506Z

Availability on request

Manufacturer: Global Power Technology Co. Ltd
Category: Diodes - Rectifiers - Single
Package: Bulk

Description

Diode Silicon Carbide Schottky 650 V 30.5A Surface Mount 8-DFN (4.9x5.75)

Datasheet Not provided

Specifications

Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 30.5A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Diode Type: Silicon Carbide Schottky
Mfr: Global Power Technology Co. Ltd
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C ~ 175°C
Package: Bulk
Package / Case: 8-PowerTDFN
Reverse Recovery Time (trr): 0 ns
Series: -
Speed: No Recovery Time > 500mA (Io)
Supplier Device Package: 8-DFN (4.9x5.75)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A