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Product details

G3S12010C

Availability on request

Manufacturer: Global Power Technology Co. Ltd
Category: Diodes - Rectifiers - Single
Package: Bulk

Description

Diode Silicon Carbide Schottky 1200 V 33.2A Surface Mount TO-252

Datasheet Not provided

Specifications

Capacitance @ Vr, F: 765pF @ 0V, 1MHz
Current - Average Rectified (Io): 33.2A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Diode Type: Silicon Carbide Schottky
Mfr: Global Power Technology Co. Ltd
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C ~ 175°C
Package: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Reverse Recovery Time (trr): 0 ns
Series: -
Speed: No Recovery Time > 500mA (Io)
Supplier Device Package: TO-252
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A