SI3585DV-T1-E3 product image

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Product details

SI3585DV-T1-E3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP

Datasheet View datasheet

Specifications

Base Product Number: SI3585
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: SOT-23-6 Thin, TSOT-23-6
Power - Max: 830mW
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Series: TrenchFET®
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)