JAN2N3499UB product image

Image shown for reference only. Refer to the product datasheet for exact specifications.

Product details

JAN2N3499UB

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - Bipolar (BJT) - Single
Package: UB

Description

Bipolar (BJT) Transistor NPN 100 V 500 mA 1 W Surface Mount UB

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 500 mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: -
Mfr: Microchip Technology
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: 3-SMD, No Lead
Power - Max: 1 W
Series: Military, MIL-PRF-19500/366
Supplier Device Package: UB
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max): 100 V