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JANS2N3439L product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANS2N3439L

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-5AA

Description

Bipolar (BJT) Transistor NPN 350 V 1 A 800 mW Through Hole TO-5AA

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
2µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C
Package
Bulk
Package / Case
TO-205AA, TO-5-3 Metal Can
Power - Max
800 mW
Series
Military, MIL-PRF-19500/368
Supplier Device Package
TO-5AA
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
350 V

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