Skip to main content
Dechoele
Prepare BOM Enquiry Request a Quote
JANTX2N3439P product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANTX2N3439P

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-39 (TO-205AD)

Description

Bipolar (BJT) Transistor NPN 350 V 1 A 800 mW Through Hole TO-39 (TO-205AD)

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
2µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C
Package
Bulk
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
800 mW
Series
Military, MIL-PRF-19500/368
Supplier Device Package
TO-39 (TO-205AD)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
350 V

Continue browsing

These products share the same category. Suitability must be confirmed independently.

14-3459 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Plymouth

14-3459