- Base Product Number
- MSCSM120
- Current - Continuous Drain (Id) @ 25°C
- 79A
- Drain to Source Voltage (Vdss)
- 1200V
- FET Feature
- Silicon Carbide (SiC)
- FET Type
- 4 N-Channel, Common Source
- Gate Charge (Qg) (Max) @ Vgs
- 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds
- 3020pF @ 1000V
- Mfr
- Microchip Technology
- Mounting Type
- Chassis Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Bulk
- Package / Case
- Module
- Power - Max
- 310W
- Rds On (Max) @ Id, Vgs
- 31mOhm @ 40A, 20V
- Series
- -
- Supplier Device Package
- -
- Vgs(th) (Max) @ Id
- 2.8V @ 1mA