Product image not available

Product details

NXH200T120H3Q2F2STNG

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Modules
Package: Tray

Description

IGBT Module Trench Field Stop Half Bridge 650 V 330 A 679 W Chassis Mount 56-PIM/Q2PACK (93x47)

Datasheet View datasheet

Specifications

Configuration: Half Bridge
Current - Collector (Ic) (Max): 330 A
Current - Collector Cutoff (Max): 500 µA
IGBT Type: Trench Field Stop
Input: Standard
Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
Mfr: onsemi
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Package: Tray
Package / Case: Module
Power - Max: 679 W
Series: -
Supplier Device Package: 56-PIM/Q2PACK (93x47)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max): 650 V