Vishay General Semiconductor - Diodes Division
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Product details
SI6913DQ-T1-BE3
Availability on request
Description
Mosfet Array 2 P-Channel (Dual) 12V 4.9A (Ta) 830mW (Ta) Surface Mount 8-TSSOP
Datasheet
Not provided
Specifications
- Current - Continuous Drain (Id) @ 25°C
- 4.9A (Ta)
- Drain to Source Voltage (Vdss)
- 12V
- FET Feature
- Standard
- FET Type
- 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds
- -
- Mfr
- Vishay Siliconix
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- 8-TSSOP (0.173", 4.40mm Width)
- Power - Max
- 830mW (Ta)
- Rds On (Max) @ Id, Vgs
- 21mOhm @ 5.8A, 4.5V
- Series
- TrenchFET®
- Supplier Device Package
- 8-TSSOP
- Vgs(th) (Max) @ Id
- 900mV @ 400µA