Vishay General Semiconductor - Diodes Division
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Product details
SQJ560EP-T1_BE3
Availability on request
Description
Mosfet Array N and P-Channel 60V 30A (Tc), 18A (Tc) 34W (Tc) Surface Mount PowerPAK® SO-8 Dual
Datasheet
Not provided
Specifications
- Current - Continuous Drain (Id) @ 25°C
- 30A (Tc), 18A (Tc)
- Drain to Source Voltage (Vdss)
- 60V
- FET Feature
- Standard
- FET Type
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 10V, 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1650pF @ 25V
- Mfr
- Vishay Siliconix
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- PowerPAK® SO-8 Dual
- Power - Max
- 34W (Tc)
- Rds On (Max) @ Id, Vgs
- 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
- Series
- Automotive, AEC-Q101, TrenchFET®
- Supplier Device Package
- PowerPAK® SO-8 Dual
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA