Product image not available

Product details

VS-40MT120PHAPBF

Availability on request

Manufacturer: Vishay General Semiconductor - Diodes Division
Category: Transistors - IGBTs - Modules
Package: Tube

Description

IGBT Module Trench Field Stop Half Bridge 1200 V 75 A 305 W Through Hole 12-MTP

Datasheet Not provided

Specifications

Configuration: Half Bridge
Current - Collector (Ic) (Max): 75 A
Current - Collector Cutoff (Max): 50 µA
IGBT Type: Trench Field Stop
Input: Standard
Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
Mfr: Vishay General Semiconductor - Diodes Division
Mounting Type: Through Hole
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tube
Package / Case: 12-MTP Module
Power - Max: 305 W
Series: -
Supplier Device Package: 12-MTP
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max): 1200 V