Product image not available

Product details

MJE13007 SL

Availability on request

Manufacturer: Central Semiconductor Corp
Category: Transistors - Bipolar (BJT) - Single
Package: TO-220-3

Description

Bipolar (BJT) Transistor NPN 400 V 8 A 4MHz 80 W Through Hole TO-220-3

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 8 A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Mfr: Central Semiconductor Corp
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power - Max: 80 W
Series: -
Supplier Device Package: TO-220-3
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max): 400 V