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Product details

NXH50M65L4C2ESG

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Modules
Package: Tube

Description

IGBT Module Three Phase Inverter 650 V 50 A 20 mW Through Hole 27-DIP

Datasheet Not provided

Specifications

Configuration: Three Phase Inverter
Current - Collector (Ic) (Max): 50 A
Current - Collector Cutoff (Max): 250 µA
IGBT Type: -
Input: Single Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 2.608 nF @ 20 V
Mfr: onsemi
Mounting Type: Through Hole
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tube
Package / Case: 27-PowerDIP Module (1.858", 47.20mm)
Power - Max: 20 mW
Series: -
Supplier Device Package: 27-DIP
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max): 650 V