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2SA1162-O,LXHF product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SA1162-O,LXHF

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - Bipolar (BJT) - Single
Package
S-Mini

Description

Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 200 mW Surface Mount S-Mini

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
150 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2mA, 6V
Frequency - Transition
80MHz
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Operating Temperature
125°C (TJ)
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
200 mW
Series
Automotive, AEC-Q101
Supplier Device Package
S-Mini
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
50 V

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