APT65GP60B2G product image

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Product details

APT65GP60B2G

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT PT 600 V 100 A 833 W Through Hole

Datasheet Not provided

Specifications

Base Product Number: APT65GP60
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 250 A
Gate Charge: 210 nC
IGBT Type: PT
Input Type: Standard
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3 Variant
Power - Max: 833 W
Series: POWER MOS 7®
Switching Energy: 605µJ (on), 896µJ (off)
Td (on/off) @ 25°C: 30ns/91ns
Test Condition: 400V, 65A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Voltage - Collector Emitter Breakdown (Max): 600 V