MJD31C1G product image

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Product details

MJD31C1G

Availability on request

Manufacturer: onsemi
Category: Transistors - Bipolar (BJT) - Single
Package: Tube

Description

Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Through Hole I-PAK

Datasheet View datasheet

Specifications

Base Product Number: MJD31
Current - Collector (Ic) (Max): 3 A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power - Max: 1.56 W
Series: -
Supplier Device Package: I-PAK
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max): 100 V