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MJD112G product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

MJD112G

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
DPAK

Description

Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
MJD112
Current - Collector (Ic) (Max)
2 A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Frequency - Transition
25MHz
Mfr
onsemi
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max
1.75 W
Series
-
Supplier Device Package
DPAK
Transistor Type
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Voltage - Collector Emitter Breakdown (Max)
100 V

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