Product image not available

Product details

BD679AG

Availability on request

Manufacturer: onsemi
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126

Datasheet Not provided

Specifications

Base Product Number: BD679
Current - Collector (Ic) (Max): 4 A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Frequency - Transition: -
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-225AA, TO-126-3
Power - Max: 40 W
Series: -
Supplier Device Package: TO-126
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Voltage - Collector Emitter Breakdown (Max): 80 V