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BD237G product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BD237G

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-126

Description

Bipolar (BJT) Transistor NPN 80 V 2 A 3MHz 25 W Through Hole TO-126

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
BD237
Current - Collector (Ic) (Max)
2 A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A, 2V
Frequency - Transition
3MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Bulk
Package / Case
TO-225AA, TO-126-3
Power - Max
25 W
Series
-
Supplier Device Package
TO-126
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
80 V

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